In this paper, we analyze the reset transition in bipolar TiN/Ti/HfO 2 (10 nm)/Al 2 O 3 (2
nm)/W ReRAM devices using a tool that allows studying the temporal behaviour of these …

Memristive devices have shown a great potential for non-volatile memory circuits and
neuromorphic computing. For both applications it is essential to know the physical …

In this paper, we develop and test a piecewise model for the reset and set transitions of a
bipolar ReRAM memristive device in the flux-charge space, instead of the usual voltage …

In this work, we introduce a simple flux-controlled compact memristor model for bipolar
neuromorphic ReRAM devices. The model behaviour and accuracy have been evaluated in …

Memristors were proposed in the early 1970s by Leon Chua as a new electrical element
linking charge to flux. Since that first introduction, these devices have positioned themselves …

We are currently facing a revolution in the fields of microelectronics and information
technologies that will surely affect our way of life in the years to come. In this regard, the …

[eng] In this work, a new approach in place of the traditional Voltage-Current (V− I) method
has been used to successfully model unipolar and bipolar ReRAM in Flux-Charge (φ− Q) …