We review the Raman thermography technique, which has been developed to determine the
temperature in and around the active area of semiconductor devices with submicron spatial …

Although the pulsed operation of AlGaN-based laser diodes at UV-C wavelengths has been
confirmed in the previous studies, continuous oscillation without cooling is difficult because …

Nowadays, after nearly half a century of rapid and sustained development of light-emitting
diodes (LEDs), conventional light sources such as incandescent and fluorescent lamps are …

This paper deals with the thermal characteristics of the IV curve of GaN-based white light-
emitting diodes (LEDs), focused on the variations of the dynamic resistance. The final goal of …

This study proposes a practical method to estimate the junction temperature of AlGaInP LED
arrays based on the shift of the center wavelength at full width at half maximum (FWHM). For …

AlInGaP LEDs are widely used in illumination applications as automotive and signalization
due their low consumption and high durability. In order to verify the high durability data it is …

The accurate temperature measurement of high-power laser diode arrays is a considerable
challenge due to their large temperature gradient and package structure. In this study …

Abstract High-power (HP) UV-LEDs can replace UV lamps for real-time fluoro-sensing
applications by allowing portable and autonomous systems. However, HP UV-LEDs are not …

A method based on the self-mixing vibration sensing signal of a multi-longitudinal mode
laser is found to measure the temperature of the laser cavity. In the experimental system, the …

The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405 nm⁠.
Based on semiconductor rate equations, the radiative efficiency is unambiguously …