Metal oxide thin‐film transistors have been continuously researched and mass‐produced in
the display industry. However, their phototransistors are still in their infancy. In particular …

Imprinting “sticky” features on the surfaces of common non-sticky flexible materials, such as
paper, textile, and polymeric films produces a myriad of adhesive tapes that we use in our …

Multivalued logic (MVL) technology is a promising solution for improving data density and
reducing power consumption in comparison to complementary metal-oxide-semiconductor …

In this article, we fabricated amorphous InSnO thin film transistors (TFTs) with exceedingly
high mobility and low thermal budget. The device is annealed only at a low temperature of …

In this study, the oxygen scavenger layer (OSL) is proposed as a back channel in the bilayer
channel to enhance both the electrical characteristics and stability of an amorphous indium …

High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using
hydrogenated IGZO (IGZO: H) at a maximum process temperature of 150° C. IGZO: H was …

A homojunction-structured oxide phototransistor based on a mechano-chemically treated
indium–gallium–zinc oxide (IGZO) absorption layer is reported. Through this novel and facile …

Sri Lanka is a major global producer of raw material-heavy minerals from beach placer
deposits. This study focusses on upgrading Sri Lankan ilmenite sands to synthetic rutile via …

A facile method is presented involving a reducing agent, sodium dithionite (Na2S2O4), to
control the photoresponse characteristics of oxide semiconductors that detect visible‐light …

In the present work, we testify a strategy to achieve high-performance ZnO thin film
transistors (TFTs) on a flexible PET substrate at a maximum process temperature no more …