Compositional mapping of semiconductor quantum dots and rings
In this article we review the extensive experimental work on the compositional mapping of
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
semiconductor quantum dots and rings. After a brief introduction of the various experimental …
Multiwavelength anomalous diffraction and diffraction anomalous fine structure to study composition and strain of semiconductor nanostructures: MAD and DAFS for …
The aim of this paper is to illustrate the use of Multi-Wavelength Anomalous Diffraction
(MAD) and Diffraction Anomalous Fine Structure (DAFS) spectroscopy for the study of …
(MAD) and Diffraction Anomalous Fine Structure (DAFS) spectroscopy for the study of …
In-plane mapping of buried InGaAs quantum rings and hybridization effects on the electronic structure
This work reports the investigation on the structural differences between InAs quantum rings
and their precursor quantum dots species as well as on the presence of piezoelectric fields …
and their precursor quantum dots species as well as on the presence of piezoelectric fields …
Resonant coherent Bragg rod analysis of strained epitaxial heterostructures
The resonant response of the complex x-ray scattering factor has been used in conjunction
with the coherent Bragg rod analysis phase-retrieval algorithm to determine the composition …
with the coherent Bragg rod analysis phase-retrieval algorithm to determine the composition …
In situ X-ray diffraction during stacking of InAs/GaAs (0 0 1) quantum dot layers and photoluminescence spectroscopy
M Takahasi, T Kaizu - Journal of crystal growth, 2009 - Elsevier
The growth of five layers of InAs quantum dots embedded in GaAs matrices was investigated
by in situ synchrotron X-ray diffraction. Time-resolved X-ray diffraction revealed the evolution …
by in situ synchrotron X-ray diffraction. Time-resolved X-ray diffraction revealed the evolution …
Optical emission and its decay time of type-II InP/GaAs quantum dots
We investigated the optical emission at 2 K from InP quantum dots (QDs) grown on GaAs
with and without a GaAs capping layer. Uncapped QDs present relatively long emission …
with and without a GaAs capping layer. Uncapped QDs present relatively long emission …
Structural, morphological, and magnetic characterization of In1− xMnxAs quantum dots grown by molecular beam epitaxy
In this paper, we present a method to order low temperature (LT) self-assembled
ferromagnetic In 1− x Mn x As quantum dots (QDs) grown by molecular beam epitaxy (MBE) …
ferromagnetic In 1− x Mn x As quantum dots (QDs) grown by molecular beam epitaxy (MBE) …
Resonant X-ray diffraction of self-assembled epitaxial systems: From direct to complementary chemical information
In this work we depict schematically the use of resonant (anomalous) X-ray diffraction as a
tool to directly probe strain and composition of self-assembled semiconductor islands. By …
tool to directly probe strain and composition of self-assembled semiconductor islands. By …
Efeito Aharonov-Bohm em partículas neutras
MD Teodoro - 2011 - repositorio.ufscar.br
In classical Physics, the motion of an electrically charged particle is affected only by the
presence of a magnetic field if the particle enters a region of space in which the field is …
presence of a magnetic field if the particle enters a region of space in which the field is …
Direct x-ray studies of epitaxial semiconductor quantum dots
DP Kumah - 2009 - search.proquest.com
Quantum dots have sparked a remarkable amount of interest in device development and the
understanding of fundamental laws of nature. The peculiar properties of quantum dots arise …
understanding of fundamental laws of nature. The peculiar properties of quantum dots arise …