A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability
Ultrawide-bandgap gallium oxide (Ga 2 O 3) devices have recently emerged as promising
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …
Low thermal resistance (0.5 K/W) Ga₂O₃ Schottky rectifiers with double-side packaging
The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga
2 O 3 power and RF devices. Despite many simulation studies, there is no experimental …
2 O 3 power and RF devices. Despite many simulation studies, there is no experimental …
[HTML][HTML] Computational Fermi level engineering and doping-type conversion of Mg: Ga2O3 via three-step synthesis process
Gallium oxide (Ga 2 O 3) is being actively explored for electronics that can operate at high
power, temperature, and frequency as well as for deep-ultraviolet optoelectronics and other …
power, temperature, and frequency as well as for deep-ultraviolet optoelectronics and other …
[图书][B] Thermal Management of Gallium Nitride Electronics
M Tadjer, T Anderson - 2022 - books.google.com
Thermal Management of Gallium Nitride Electronics outlines the technical approaches
undertaken by leaders in the community, the challenges they have faced, and the resulting …
undertaken by leaders in the community, the challenges they have faced, and the resulting …
Thermal analysis of gallium oxide-based field-effect transistors on different substrates
In this paper, a compact model is presented for the calculation of thermal resistance of
gallium oxide-based field-effect transistors (FETs). A gallium oxide epilayer with different …
gallium oxide-based field-effect transistors (FETs). A gallium oxide epilayer with different …
How to achieve low thermal resistance and high electrothermal ruggedness in Ga2O3 devices?
Ultra-wide bandgap gallium oxide (Ga2O3) devices have recently emerged as promising
candidates for power and RF electronics. The low thermal conductivity of Ga2O3 has …
candidates for power and RF electronics. The low thermal conductivity of Ga2O3 has …
Gallium oxide techno-economic analysis for the wide bandgap semiconductor market
SB Reese, A Zakutayev - Oxide-based Materials and Devices …, 2020 - spiedigitallibrary.org
More than 30% of electrical energy passes through power electronics today with speculation
that in the next decade this could grow to 80%. The wide bandgap semiconductor market is …
that in the next decade this could grow to 80%. The wide bandgap semiconductor market is …
Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests
M Pulvirenti, D Cavallaro, N Bentivegna… - … on Power Electronics …, 2020 - ieeexplore.ieee.org
The aim of this paper is to analyze the SiC MOSFETs behavior under repetitive short circuit
tests. In particular, the activity is focused on a deep evaluation of short circuit dynamic by …
tests. In particular, the activity is focused on a deep evaluation of short circuit dynamic by …