Deep-ultraviolet light-emitting diodes
Compact solid-state deep-ultraviolet (DUV) light-emitting diodes (LEDs) go far beyond
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …
Improvement in output power of 280-nm deep ultraviolet light-emitting diode by using AlGaN multi quantum wells
A Fujioka, T Misaki, T Murayama… - Applied physics …, 2010 - iopscience.iop.org
We fabricated high-output-power 280-nm light-emitting diodes (LEDs) by employing high-
crystal-quality AlN templates and optimized epitaxial structures. The emission wavelength …
crystal-quality AlN templates and optimized epitaxial structures. The emission wavelength …
Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
W Sun, M Shatalov, J Deng, X Hu, J Yang… - Applied Physics …, 2010 - pubs.aip.org
We report on 245–247 nm AlGaN-based deep ultraviolet (DUV) light-emitting diodes with
continuous wave output power up to 2 mW. DUV diodes with peak emission wavelength of …
continuous wave output power up to 2 mW. DUV diodes with peak emission wavelength of …
Rare-earth doped gadolinia based phosphors for potential multicolor and white light emitting deep UV LEDs
Gadolinium oxide host and europium/dysprosium/terbium doped gadolinium oxide
nanoparticles were synthesized using the sonochemical technique. Gadolinium oxide …
nanoparticles were synthesized using the sonochemical technique. Gadolinium oxide …
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique
VN Jmerik, TV Shubina, AM Mizerov, KG Belyaev… - Journal of crystal …, 2009 - Elsevier
Al-rich AlGaN layers and quantum well (QW) structures with a reasonable structural quality
have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) under metal-rich …
have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) under metal-rich …
Deep-UV-LEDs in photometric detection: A 255 nm LED on-capillary detector in capillary electrophoresis
L Krčmová, A Stjernlof, S Mehlen, PC Hauser, S Abele… - Analyst, 2009 - pubs.rsc.org
A 255 nm deep-UV-light-emitting diode (deep-UV-LED) is investigated as a novel light
source for photometric detection in view of fundamental properties of UV-LEDs, in particular …
source for photometric detection in view of fundamental properties of UV-LEDs, in particular …
Well-width-dependent carrier lifetime in AlGaN∕ AlGaN quantum wells
A set of Al 0.35 Ga 0.65 N∕ Al 0.49 Ga 0.51 N multiple quantum wells (MQWs) with fixed
barrier width and well widths varying from 1.65 to 5.0 nm has been grown by metal-organic …
barrier width and well widths varying from 1.65 to 5.0 nm has been grown by metal-organic …
A UV LED-based fast-pulsed photoelectron source for time-of-flight studies
K Valerius, M Beck, H Arlinghaus, J Bonn… - New Journal of …, 2009 - iopscience.iop.org
We report on spectroscopy and time-of-flight measurements using an 18 keV fast-pulsed
photoelectron source of adjustable intensity, ranging from single photoelectrons per pulse to …
photoelectron source of adjustable intensity, ranging from single photoelectrons per pulse to …
Reliability issues in AlGaN based deep ultraviolet light emitting diodes
A Khan, S Hwang, J Lowder… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
AlGaN based deep ultraviolet light emitting diodes (DUV LEDs) are key components in
systems for air, water, and food purification and germicidal applications. Because of the …
systems for air, water, and food purification and germicidal applications. Because of the …
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy
VN Jmerik, AM Mizerov, TV Shubina, AV Sakharov… - Semiconductors, 2008 - Springer
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low
temperatures of the substrate (no higher than 740° C) and various stoichiometric conditions …
temperatures of the substrate (no higher than 740° C) and various stoichiometric conditions …