Electrical stress in CdS thin film transistors using HfO2 gate dielectric
During thin film transistor (TFT) operation, gate dielectric is under a bias stress condition. In
this work, bias stress effect for CdS TFT using HfO 2 as gate dielectric is analyzed. Threshold …
this work, bias stress effect for CdS TFT using HfO 2 as gate dielectric is analyzed. Threshold …
A compact drain current model for thin-film transistor under bias stress condition
Several basic thin-film transistor (TFT) models have been developed to describe the
electrical characteristics of the device, most of them only considering the fundamental …
electrical characteristics of the device, most of them only considering the fundamental …
Hydrogenated amorphous/nanocrystalline silicon thin films on porous anodic alumina substrate
Hydrogenated amorphous and nanocrystalline silicon thin films were grown on porous
anodic alumina substrates using electron cyclotron resonance-chemical vapor deposition …
anodic alumina substrates using electron cyclotron resonance-chemical vapor deposition …
Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors
We have demonstrated inverted staggered bottom-gate back-channel-passivated
hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil …
hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil …
Interface States in Amorphous Silicon Thin-Film Transistors
Z Hafdi - Amorphous Silicon Thin-Film Transistors: Operation …, 2023 - Springer
This chapter reveals at what extent the electronic transport in amorphous silicon-based
transistors is not only inherent to the material bulk properties, but also involves a deep …
transistors is not only inherent to the material bulk properties, but also involves a deep …
[PDF][PDF] Surface states in amorphous silicon thin-film transistors: modeling and impact
Z Hafdi - World Applied Sciences Journal, 2014 - researchgate.net
This paper focuses on the effects of surface states on the performance of hydrogenated
amorphous silicon based thin-film transistors. An analytical model which simultaneously …
amorphous silicon based thin-film transistors. An analytical model which simultaneously …
[PDF][PDF] CARACTERIZACIÓN DEL ESTRÉS ELÉCTRICO EN TRANSISTORES DE PELÍCULA DELGADA
LCA Simón, RZG Lozano - … ELECTRÓNICA DEL MAYAB. NOVIEMBRE DEL 2019 … - diee.net
El efecto del estrés eléctrico en la electrónica basada en transistores de película delgada
(TFT) es una de las principales limitantes para el desarrollo de aplicaciones en esta …
(TFT) es una de las principales limitantes para el desarrollo de aplicaciones en esta …
[PDF][PDF] CARACTERIZACIÓN DEL ESTRÉS ELÉCTRICO EN TRANSISTORES DE PELÍCULA DELGADA
LC Álvarez-Simón, RZ García-Lozano - REVISTA DEL CENTRO DE … - researchgate.net
El efecto del estrés eléctrico en la electrónica basada en transistores de película delgada
(TFT) es una de las principales limitantes para el desarrollo de aplicaciones en esta …
(TFT) es una de las principales limitantes para el desarrollo de aplicaciones en esta …
N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire temperature
Y Omori, A Tabata, A Kondo - Thin solid films, 2011 - Elsevier
For nitride layer formation on a hydrogenated microcrystalline silicon film surface, post-
deposition treatments were carried out using a tungsten wire heated to 1700° C in N2 …
deposition treatments were carried out using a tungsten wire heated to 1700° C in N2 …
[图书][B] Chalcogenide based materials and devices for flexible electronics applications
AL Salas-Villasenor - 2013 - search.proquest.com
The scaling of large-area electronics for applications in flat-panel displays, digital X-ray
images, and flexible electronics is pushing the technological and cost limits of conventional …
images, and flexible electronics is pushing the technological and cost limits of conventional …