In this paper, we present the progress in the growth of nanoscale semiconductors grown via
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …

In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …

In this work, we report on self-limiting growth of InN thin films at substrate temperatures as
low as 200 C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The …

In this work, we have studied the role varying nitrogen plasma compositions play in the low-
temperature plasma-assisted growth of indium nitride (InN) thin films. Films were deposited …

Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire
substrates at 200 C via hollow-cathode plasma-assisted atomic layer deposition (HCPA …

Due to interest in thin films of oxides and nitrides of group 13 elements (Al, Ga, and In) and
their multicomponent combinations, their atomic layer deposition (ALD) processes are being …

In this study, we report on the growth of crystalline InN thin films by plasma-enhanced atomic
layer deposition (PE-ALD). By systematically investigating the growth parameters, we …

In x Ga 1− x N is a strategically important material for electronic devices given its tunable
bandgap, modulated by the In/Ga ratio. However, current applications are hindered by …

A comparative chemical analysis of In x S y and In 2 (S, O) 3 thin films grown by atomic layer
deposition (ALD) and plasma-enhanced ALD, respectively, was performed to understand …