Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft
X Liu, Z Lv, Z Liao, Y Sun, Z Zhang, K Sun… - Microsystems & …, 2024 - nature.com
AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral
range (210–280 nm) have demonstrated potential applications in physical sterilization …
range (210–280 nm) have demonstrated potential applications in physical sterilization …
Advancements in Micro-LED Performance through Nanomaterials and Nanostructures: A Review
A Fang, Z Du, W Guo, J Liu, H Xu, P Tang, J Sun - Nanomaterials, 2024 - mdpi.com
Micro-light-emitting diodes (μLEDs), with their advantages of high response speed, long
lifespan, high brightness, and reliability, are widely regarded as the core of next-generation …
lifespan, high brightness, and reliability, are widely regarded as the core of next-generation …
Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode
T Jia, B Wang, G Zhang, C Chu, C Fan… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The performance for free-pGaN deep-ultraviolet light-emitting diodes (DUV LEDs) is still
limited by total internal reflection (TIR), p-electrode absorption, and self-heating effect. In this …
limited by total internal reflection (TIR), p-electrode absorption, and self-heating effect. In this …
Deep ultraviolet AlGaN-multiple quantum wells with photoluminescence enhanced by topological corner state
B Wang, A Hu, Q Liu, Y Wang, S Zhang, Y Ren, S Li… - Optics …, 2024 - opg.optica.org
The AlGaN-based deep ultraviolet light-emitting diode (DUV LED) has advantages of
environmentally friendly materials, tunable emission wavelength, and easy miniaturization …
environmentally friendly materials, tunable emission wavelength, and easy miniaturization …
Numerical investigation on the polarization-dependent light extraction of 275-nm AlGaN based nanowire with bowtie antenna array or passivation layer
KY Nie, M Fang, Z Hu, FF Ren - Physica Scripta, 2024 - iopscience.iop.org
The low light extraction efficiency (LEE) is one of the major factors hindering the application
of AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs). Here we investigate the …
of AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs). Here we investigate the …
Hybridization of Electronic Bands for Extending Plasmonic Band by Alloyed Nanostructures
J Zhang, W Wu - Plasmonics, 2024 - Springer
Plasmonic nanostructures have extensive applications in sensors and optoelectronic
devices. Noble metals are the most suitable candidates for the construction of plasmons due …
devices. Noble metals are the most suitable candidates for the construction of plasmons due …