With classical scaling of CMOS transistors according to Dennard's scaling rules running out
of steam, new possibilities to increase the functionality of an integrated circuit at a given …

As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, developing semiconductor technology with novel concepts and …

Reconfigurable field-effect transistors (FETs) combine unipolar n-and p-type characteristics
in a single programmable device and could be used to reduce the complexity of electronic …

Reconfigurable field effect transistors are an emerging class of electronic devices, which
exploit a structure with multiple independent gates to selectively adjust the charge carrier …

The reconfigurable field-effect transistor (RFET), is an electronic device whose conduction
mechanism can be reversibly reconfigured between n-type and p-type operation modes. To …

We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on
a silicon nanowire that can be electrostatically programmed to p-and n-configuration. The …

This paper explores how the Schottky barrier (SB) transistor is used in a variety of
applications and material systems. A discussion of SB formation, current transport …

Conventional field‐effect transistor (FET) concepts are limited to static electrical functions
and demand extraordinarily steep and reproducible doping concentration gradients …

In this article, a novel tree-type channel reconfigurable field-effect transistor (RFET) is
proposed to obtain improved ON-state performance. Compared with the conventional …

The ever-increasing demand for low-power and area-efficient circuits for use in battery-
powered devices and the CMOS scaling problems have attracted the attention of VLSI …