Over the past few decades, the field of molecular electronics has greatly benefited from
advances in the fundamental understanding of charge transport mechanisms. Molecular …

This paper provides an overview on Random Telegraph Signals (RTSs) in solid-state
devices and more in particular in scaled silicon MOSFETs. It tries to answer the following …

The intense development and study of resistive random access memory (RRAM) devices
has opened a new era in semiconductor memory manufacturing. Resistive switching and …

This book brings together new developments in the area of strain-engineered MOSFETs
using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V …

We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid
gate. The NW devices show advanced characteristics, which reflect reliable single-electron …

Read current fluctuation (ΔI read) due to random telegraph noise was measured from a cell
in a NAND flash memory cell string, and its effect on threshold voltage fluctuation (ΔV th) …

This overview focuses on the different types of noise occurring in deep submicrometer
silicon metal oxide semiconductor field-effect transistors and their use as an analytical tool …

The single-electron transistor (SET) is a prime candidate for reading out the final state of a
qubit in a solid-state quantum computer. Such a measurement requires the detection of …

We study random telegraph noise in the conductance of InAs nanowire field-effect
transistors due to single electron trapping in defects. The electron capture and emission …

The author reviews the recent results obtained on the low-frequency noise characteristics of
deep-submicron metal–oxide–semiconductor field-effect transistors (MOSFETs). The …