Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using
planar transmission line measurement structures. All contacts showed a nonlinear behavior …

In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich
p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the …

The nonpolar a-plane Mg-delta-doped Al 0.6 Ga 0.4 N/GaN superlattices (SLs) with
enhanced hole concentration were successfully grown by using indium (In)-surfactant with …

The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the
realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au …

We report on the effect of growth polarity and pulsed or δ δ-doped growth mode on impurity
incorporation in metalorganic chemical vapor deposition-grown GaN. In Ga-polar …

Proton irradiation at 5 MeV was performed on normally-off p-AlGaN gate AlGaN/GaN high
electron mobility transistors (HEMTs). The increase of on-resistance and the degradation of …

This study reports the pulsed sputtering deposition (PSD) epitaxial growth of In–Mg‐
codoped GaN with a high hole concentration of 6.2× 1018 cm− 3 and its hole conduction …

In this work, we clarify the underlying physics and the acceptor ionization process in the In-
Mg co-doping GaN. The fundamental understandings are also applicable for other co …

We present a detailed investigation of the mechanisms at play for the incorporation of In and
Mg on the GaN (0001) surface during plasma-assisted molecular beam epitaxy. First, we …

Abstract In the United States and around the world, the growing energy demands and
climate concerns necessitate renewable and efficient energy production. Thermoelectric …