This review aims at providing a retrospective, as well as a description of the state-of-the-art
and future prospects regarding the theoretical and experimental characterisation of negative …

Silicon solar cells containing boron and oxygen are one of the most rapidly growing forms of
electricity generation. However, they suffer from significant degradation during the initial …

Results available in the literature on minority carrier trapping and light‐induced degradation
(LID) effects in silicon materials containing boron and oxygen atoms are briefly reviewed …

The dependencies of the B i O i defect concentration on doping, irradiation fluence and
particle type in p-type silicon diodes have been investigated. We evidenced that large data …

The investigation of defect properties in silicon, including charge transition levels and non-
radiative carrier capture, has been ongoing for over 60 years. However, many questions still …

Ga-doped recharged Czochralski silicon (Ga-RCZ) is now becoming mainstream in the
current photovoltaic market because of the enhanced production efficiency and reduced …

Photoluminescence spectra have been measured at 80 K in Czochralski-grown silicon
wafers annealed at 450° C, causing thermal donor and oxygen-precipitate generation. Six …

Oxygen belongs to the most important impurities in many types of solar silicon. Interstitial
oxygen is already incorporated in a supersaturated state during crystal growth. Subsequent …

The capture cross sections are a key metric to characterize carrier traps in semiconductors.
In this article, photoconductance measurements are used to estimate the capture cross …

Low-temperature photoluminescence spectroscopy is applied to investigate the difference in
luminescence spectra in phosphorous doped and boron doped Cz-Si wafers with different …