A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band

T Maiwald, T Li, GR Hotopan, K Kolb… - Proceedings of the …, 2023 - ieeexplore.ieee.org
The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …

A 58–65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply

WL Chan, JR Long - IEEE journal of solid-state circuits, 2010 - ieeexplore.ieee.org
A 60-GHz band, three-stage pseudo-differential power amplifier (PA) is implemented with
input and output baluns on-chip. Each stage consists of a neutralized common-source …

A QPSK 110-Gb/s polarization-diversity MIMO wireless link with a 220–255 GHz tunable LO in a SiGe HBT technology

P Rodriguez-Vazquez, J Grzyb… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
In this article, a polarization-diversity technique multiple-input multiple-output (MIMO) is
demonstrated to double the spectral efficiency of a line-of-sight quadrature phase-shift …

Record RF performance of 45-nm SOI CMOS technology

S Lee, B Jagannathan, S Narasimha… - 2007 IEEE …, 2007 - ieeexplore.ieee.org
We report record RF performance in 45-nm silicon-on-insulator (SOI) CMOS technology. RF
performance scaling with channel length and layout optimization is demonstrated. Peak f T's …

A 56–65 GHz injection-locked frequency tripler with quadrature outputs in 90-nm CMOS

WL Chan, JR Long - IEEE Journal of Solid-State Circuits, 2008 - ieeexplore.ieee.org
A sub-harmonic injection-locked tripler multiplies a 20-GHz differential input to 60-GHz
quadrature (I/Q) output signals. The tripler consists of a two-stage ring oscillator driven by a …

A SiGe HBT 215–240 GHz DCA IQ TX/RX chipset with built-in test of USB/LSB RF asymmetry for 100+ Gb/s data rates

J Grzyb, P Rodríguez-Vázquez, S Malz… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
A highly integrated fundamentally operated direct-conversion quadrature (IQ) TX/RX chipset
with a tunable carrier of 215–240 GHz for high-speed wireless communication is presented …

Extensive electrical characterization methodology of advanced MOSFETs towards analog and RF applications

V Kilchytska, S Makovejev, BK Esfeh… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
This review paper assesses the main approaches in the electrical characterization of
advanced MOSFETs towards their future analog and RF applications. Those approaches …

A comparison of the degradation in RF performance due to device interconnects in advanced SiGe HBT and CMOS technologies

RL Schmid, AÇ Ulusoy… - … on Electron Devices, 2015 - ieeexplore.ieee.org
This paper investigates the impact of the interconnect between the bottom and the top metal
layers on the transistor RF performance of CMOS and silicon-germanium (SiGe) …

Parasitic gate capacitance model for triple-gate FinFETs

SS Rodriguez, JC Tinoco… - … on Electron Devices, 2013 - ieeexplore.ieee.org
Triple-gate FinFETs have demonstrated to be promising candidates to push further the
performance limits of the microelectronics industry, thanks to their high immunity to short …

Area optimization techniques for high-density spin-orbit torque MRAMs

Y Seo, KW Kwon - Electronics, 2021 - mdpi.com
This paper presents area optimization techniques for high-density spin-orbit torque magnetic
random-access memories (SOT-MRAMs). Although SOT-MRAM has many desirable …