Recent trends on junction-less field effect transistors in terms of device topology, modeling, and application
Junction less field effect transistor, also known as JLFET, is widely regarded as the most
promising candidate that has the potential to replace the more conventional MOSFET used …
promising candidate that has the potential to replace the more conventional MOSFET used …
Junctionless gate-all-around nanowire FET with asymmetric spacer for continued scaling
VB Sreenivasulu, V Narendar - Silicon, 2021 - Springer
In this paper, we have performed the scaling of asymmetric junctionless (JL) SOI nanowire
(NW) FET at 10 nm gate length (LG). To study the device electrical performance various DC …
(NW) FET at 10 nm gate length (LG). To study the device electrical performance various DC …
[HTML][HTML] β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
This paper presents a new β-Ga 2 O 3 Junctionless double gate Metal-Oxide-Field-
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Scattering mechanisms in β-Ga2O3 junctionless SOI MOSFET: investigation of electron mobility and short channel effects
In this work, we investigate the β-Ga 2 O 3 Junctionless SOI MOSFET (β-JLSM) by an
inserted P-layer in the buried oxide (BOX) region (IPB β-JLSM). We focused on the electron …
inserted P-layer in the buried oxide (BOX) region (IPB β-JLSM). We focused on the electron …
Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
In this study, we analyze a β-Ga2O3 gate-all-around nanowire junctionless transistor (β-GAA-
JLT) in accumulation mode. The performances are investigated by considering quantum …
JLT) in accumulation mode. The performances are investigated by considering quantum …
Realization of Double‐Gate Junctionless Field Effect Transistor Depletion Region for 6 nm Regime with an Efficient Layer
Herein, the authors suggest a junctionless field effect transistor with an embedded p‐type
layer (EPL‐JLT) near the drain channel side, employing calibrated structure simulations to …
layer (EPL‐JLT) near the drain channel side, employing calibrated structure simulations to …
β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode
D Madadi - Silicon, 2022 - Springer
In this paper, we present a solution for understanding volume depletion and essentially
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements
In our work, we demonstrate a 4H-SiC gate-all-around cylindrical nanowire junctionless
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode
In this article, a new metal-semiconductor field-effect transistor (MESFET) is introduced by
amending the carrier distribution in the active regions of the device for radio frequency …
amending the carrier distribution in the active regions of the device for radio frequency …
Junction-less SOI FET with an Embedded p+ Layer: Investigation of DC, RF, and Negative Capacitance Characteristics
D Madadi, S Mohammadi - Silicon, 2023 - Springer
This paper presents a Junction-less SOI FET with an embedded p+ layer (EP-JLFET) to
obtain extensive volume depletion in 14 nm channel length of the device. The p+ embedded …
obtain extensive volume depletion in 14 nm channel length of the device. The p+ embedded …