Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology

AE Yachmenev, SS Pushkarev, RR Reznik… - Progress in Crystal …, 2020 - Elsevier
The fabrication and investigation of single and multilayered structures have become an
essential issue in the past decades since these structures directly define valuable properties …

Survey of terahertz photonics and biophotonics

K Ahi, N Jessurun, MP Hosseini… - Optical …, 2020 - spiedigitallibrary.org
We review the advances of terahertz (THz) science and technology in biophotonics,
including related challenges and solutions. The main impediment to THz spectroscopy and …

High-speed mid-wave infrared holey photodetectors

Y Wang, L Nordin, S Dev, M Allen, J Allen… - Journal of Applied …, 2023 - pubs.aip.org
We demonstrate high-speed mid-wave infrared photoconductive detectors leveraging a
lattice-mismatched, epitaxially grown InSb absorber material patterned with nanometer …

Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

S Chatterjee, S Khalid, HS Inbar, A Goswami… - Physical Review B, 2019 - APS
Observation of large nonsaturating magnetoresistance in rare-earth monopnictides has
raised enormous interest in understanding the role of its electronic structure. Here, by a …

Trivial to nontrivial topology transition in rare-earth pnictides with epitaxial strain

S Khalid, A Janotti - Physical Review B, 2020 - APS
The combination of magnetotransport and topological properties has brought great attention
to rare-earth monopnictides semimetals. For some of them, like LaSb, it is unclear whether …

Appearance of topological phase in YAs semimetal under hydrostatic pressure and epitaxial strain

R Kumar, M Singh - Journal of Physics and Chemistry of Solids, 2024 - Elsevier
By means of hybrid density functional theory, we present the evolution of the topological
phase in rare earth monopnictide YAs with hydrostatic pressure and epitaxial strain. This …

[HTML][HTML] Improved epitaxial growth of TbAs film on III–V semiconductors

Y Wang, J Bork, S Law, JMO Zide - … of Vacuum Science & Technology A, 2020 - pubs.aip.org
In order to achieve high epitaxial quality of rocksalt TbAs, the authors studied the molecular
beam epitaxy growth of TbAs films on zincblende (001) GaAs and (001) InP: Fe wafers …

Mechanism for embedded in-plane self-assembled nanowire formation

NS Wilson, S Kraemer, DJ Pennachio, P Callahan… - Physical Review …, 2020 - APS
We report a growth mechanism that produces in-plane [1 1¯ 0] oriented ErSb nanowires
formed during codeposition of E r 0.3 G a 0.7 Sb via molecular beam epitaxy (MBE) …

[图书][B] NANOCHEMISTRY AND CHARACTERISTICS

RS Gaikwad - 2022 - books.google.com
Nowadays, its need of consume a energy because of crunch of availability of energy
sources. In our daily life, we are using too much equipment for smooth working of routine …