Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing
The influence of thermal annealing on the properties of germanium grown on silicon (Ge-on-
Si) has been investigated. Depth dependencies of strain and photoluminescence (PL) were …
Si) has been investigated. Depth dependencies of strain and photoluminescence (PL) were …