An Ultra-Compact 0.17mm2 2.4GHz Low-Voltage Class-E Power Amplifier in 28nm CMOS
A Seidel, M Kreißig, F Ellinger - 2018 IEEE-APS Topical …, 2018 - ieeexplore.ieee.org
This paper presents the design of a single ended class-E power amplifier in a low
voltage28nm CMOS process using a stacked transistors technique. It is designed to amplify …
voltage28nm CMOS process using a stacked transistors technique. It is designed to amplify …
Design of radio frequency power amplifier for 2.45 GHz IoT application using 0.18 µm CMOS technology
N Rhaffor, WK Ang, MF Packeer Mohamed… - Microelectronics …, 2023 - emerald.com
Purpose The purpose of this study is to show that due to the emergence of the Internet of
Things (IoT) industry in recent years, the demand for the higher integration of wireless …
Things (IoT) industry in recent years, the demand for the higher integration of wireless …
Design of efficient power amplifier for low power transmitters
This paper presents a fully integrated, low transmit-power and high-efficiency 2.4 GHz class-
E power amplifier (PA) in TSMC 0.18 μm CMOS process for low-power transmitters such as …
E power amplifier (PA) in TSMC 0.18 μm CMOS process for low-power transmitters such as …
基于SOI-0.18 μm 高PAE CMOS Class-E 功率放大器
郑岩， 李志强， 刘昱， 黄水龙， 张海英 - 微电子学与计算机, 2017 - journalmc.com
基于IBM SOI-0.18 μm CMOS 工艺, 实现了高PAE 的Class-E 功率放大器. 此放大器由两级构成.
在输出级采用了负电容技术, 抵消寄生电容, 提高效率. 输出级的共栅管采用自偏置 …
在输出级采用了负电容技术, 抵消寄生电容, 提高效率. 输出级的共栅管采用自偏置 …
A High efficiency body injected differential power amplifier at 2.4 GHz for low power applications
MN Sasikanth, TK Bhattacharyya - 2018 31st International …, 2018 - ieeexplore.ieee.org
In this paper, we propose a novel topology for an injection locked differential power
amplifier. This power amplifier is targeted for low power wireless applications such as …
amplifier. This power amplifier is targeted for low power wireless applications such as …