Improved methodology for parasitic characterization of high-performance power modules
BT DeBoi, AN Lemmon, BW Nelson… - … on Power Electronics, 2020 - ieeexplore.ieee.org
The accelerating commercialization of wide bandgap technology has led to increased
demand for accurate characterization of parasitic impedances within packaging structures …
demand for accurate characterization of parasitic impedances within packaging structures …
Integrated Rogowski coil sensor for press-pack insulated gate bipolar transistor chips
C Jiao, Z Zhang, Z Zhao, X Zhang - Sensors, 2020 - mdpi.com
Recently, the press-pack insulated gate bipolar transistor (IGBT) has usually been used in
direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss …
direct current (DC) transmission. The press-pack IGBT (PPI) adopts a parallel layout of boss …
Optimization algorithms for dynamic tuning of wide bandgap semiconductor device models
W Collings, T Nelson, A Sellers… - 2021 IEEE Applied …, 2021 - ieeexplore.ieee.org
Circuit and device parasitics have an outsized effect on the switching voltage and current
waveforms of wide bandgap semiconductors. The variation of these parasitic components …
waveforms of wide bandgap semiconductors. The variation of these parasitic components …
Optimized design of current, temperature and stress distributions among paralleled chips in press-pack IGBT module
L Han, L Liang, Y Kang - CSEE Journal of Power and Energy …, 2022 - ieeexplore.ieee.org
In Press-Pack IGBT, compact packaging structure forms the strong electromagnetic coupling,
thermal coupling and stress coupling, threatening current sharing, temperature sharing and …
thermal coupling and stress coupling, threatening current sharing, temperature sharing and …
Condition Monitoring of Multi-chip Parallel Presspack IGBT Devices Based on Current Distribution
Z Deng, M Chen, Y Wei, W Lai, H Li… - … on HVDC (HVDC), 2020 - ieeexplore.ieee.org
Press-pack IGBTs (PPI) are key components in flexible DC transmission converter valves
due to its advantages of compact structure, short circuit failure, and high power density …
due to its advantages of compact structure, short circuit failure, and high power density …
Effect and Resolution of Parasitic Inductance of on Current Sharing for Parallel SiC MOSFETs
SiC MOSFETs are gaining in popularity due to their excellent performance. In the
applications of high voltage and high current power converters, a multi-chip parallel method …
applications of high voltage and high current power converters, a multi-chip parallel method …