In this work, a highly linear temperature sensor based on a silicon carbide (SiC) pn diode is
presented. Under a constant current biasing, the diode has an excellent linear response to …

SiC is widely used in power electronics and high-temperature devices due to its
comprehensive physicochemical properties, including high thermal stability, mechanical …

Herein, we demonstrated the fabrication and operation of vertical diamond Schottky barrier
diode (SBD) as a high-performance temperature sensor. The current transport mechanism …

The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature
range from T= 85 up to 443 K is presented. The linear dependence on temperature of the …

One-dimensional silicon carbide (SiC) nanomaterials hold great promise for a series of
applications, such as nanoelectronic devices, sensors, supercapacitors, and catalyst …

The linear dependence on temperature of the voltage drop VD across a forward-biased 4H-
SiC pin diode is investigated experimentally. The results show that the fabricated …

We have discussed the thermal sensing capability under a constant current level and current
versus voltage (I–V) traces by measuring the temperature of high series resistance Pt/n …

A high-speed and high-temperature calorimetric solid-state thermal mass flow sensor
(TMFS) design was proposed and its sensitivity to temperature and airflow speed were …

Silicon carbide (SiC) power MOSFETs are available only for high-power and medium-to-
high-voltage applications, generally above 600 V, because for lower blocking voltages, they …

The development of high-temperature sensors (up to 450° C), based on SiC Schottky
diodes, which are able to work in harsh conditions, requires using high-barrier Schottky …