Insulators for 2D nanoelectronics: the gap to bridge
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
Lanthanide rare earth oxide thin film as an alternative gate oxide
An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …
integrated circuits will increase exponentially every two to three years as predicted by …
TSV-based 3-D ICs: Design methods and tools
Vertically integrated circuits (3-D ICs) may revitalize Moore's law scaling which has slowed
down in recent years. 3-D stacking is an emerging technology that stacks multiple dies …
down in recent years. 3-D stacking is an emerging technology that stacks multiple dies …
High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties
WH Chang, CH Lee, P Chang, YC Chang, YJ Lee… - Journal of Crystal …, 2009 - Elsevier
MBE-grown single-crystal Gd2O3 epitaxially on GaN has exhibited excellent thermal
stability, withstanding rapid thermal annealing (RTA) at 1100° C. The high-κ dielectric …
stability, withstanding rapid thermal annealing (RTA) at 1100° C. The high-κ dielectric …
Microstructure and optical properties of Gd2O3 thin films prepared by pulsed laser deposition
Abstract Gadolinium oxide (Gd 2 O 3) thin films were deposited on Si (100) and quartz
substrates at different substrate temperatures (300–873 K) and oxygen partial pressures …
substrates at different substrate temperatures (300–873 K) and oxygen partial pressures …
Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles
Monolayer (ML) transition-metal dichalcogenides (TMDCs) represent a novel class of
materials for investigating excitonic quasiparticles in two dimensions and designing novel …
materials for investigating excitonic quasiparticles in two dimensions and designing novel …
MOCVD growth of gadolinium oxide layers on tubes
A Sawka - Ceramics International, 2023 - Elsevier
In the paper, non-porous and smooth gadolinium oxide layers were synthesized on the inner
surfaces of quartz glass tubes using MOCVD (Metalorganic Chemical Vapour Deposition) in …
surfaces of quartz glass tubes using MOCVD (Metalorganic Chemical Vapour Deposition) in …
Surface passivation of silicon substrate by ternary GaxCeyOz layers grown via combination of forming gas and oxygen at different temperatures
A systematic evaluation of deploying Ga x Ce y O z passivation layer (PL) on Si substrate
subjected to postdeposition annealing in forming gas-oxygen-forming gas ambient at …
subjected to postdeposition annealing in forming gas-oxygen-forming gas ambient at …
Epitaxial systems combining oxides and semiconductors
Oxides form a class of material, which covers almost all the spectra of functionalities:
dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric …
dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric …
Electro-absorption modulator
G Yu, AJ Zilkie - US Patent 10,838,240, 2020 - Google Patents
An optoelectronic device comprising: a silicon-on-insulator (SOI) substrate, the substrate
comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support …
comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support …