Interfacial thermal resistance: Past, present, and future

J Chen, X Xu, J Zhou, B Li - Reviews of Modern Physics, 2022 - APS
Interfacial thermal resistance (ITR) is the main obstacle for heat flows from one material to
another. Understanding ITR becomes essential for the removal of redundant heat from fast …

Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices

Z Cheng, F Mu, L Yates, T Suga… - ACS applied materials & …, 2020 - ACS Publications
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …

First-principles modeling of thermal transport in materials: achievements, opportunities, and challenges

T Ma, P Chakraborty, X Guo, L Cao, Y Wang - International Journal of …, 2020 - Springer
Thermal transport properties have attracted extensive research attentions over the past
decades. First-principles-based approaches have proved to be very useful for predicting the …

Electrical and thermal percolation in two-phase materials: A perspective

IY Forero-Sandoval, AP Franco-Bacca… - Journal of Applied …, 2022 - pubs.aip.org
Electrical percolation in two-phase materials involves a very singular behavior, manifested
as a huge change in the electrical conductivity, for a given volume or mass fraction of the …

[HTML][HTML] Thermal conductivity of III-V semiconductor superlattices

S Mei, I Knezevic - Journal of Applied Physics, 2015 - pubs.aip.org
This paper presents a semiclassical model for the anisotropic thermal transport in III-V
semiconductor superlattices (SLs). An effective interface rms roughness is the only …

Enhancement of thermal conductance at metal-dielectric interfaces using subnanometer metal adhesion layers

M Jeong, JP Freedman, HJ Liang, CM Chow… - Physical Review …, 2016 - APS
We show that the use of subnanometer adhesion layers significantly enhances the thermal
interface conductance at metal-dielectric interfaces. A metal-dielectric interface between Au …

Energy Transport State Resolved Raman for Probing Interface Energy Transport and Hot Carrier Diffusion in Few-Layered MoS2

P Yuan, R Wang, H Tan, T Wang, X Wang - Acs Photonics, 2017 - ACS Publications
Quantitative understanding of 2D atomic layer interface thermal resistance (R) based on
Raman characterization is significantly hindered by unknown sample-to-sample optical …

Tuning phonon transport: from interfaces to nanostructures

PM Norris, NQ Le, CH Baker - Journal of Heat …, 2013 - asmedigitalcollection.asme.org
A wide range of modern technological devices utilize materials structured at the nanoscale
to improve performance. The efficiencies of many of these devices depend on their thermal …

A review of computational phononics: the bulk, interfaces, and surfaces

F VanGessel, J Peng, PW Chung - Journal of materials science, 2018 - Springer
Broad-based interest in microscale heat transport in novel materials, engineered phononic
materials, metamaterials, and their relevant systems has created significant demand for …

Modification of the phonon spectrum of bulk Si through surface nanostructuring

A Iskandar, A Gwiazda, Y Huang, M Kazan… - Journal of Applied …, 2016 - pubs.aip.org
In this paper, we present experimental evidence on the change of the phonon spectrum and
vibrational properties of a bulk material through phonon hybridization mechanisms. The …