Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

Silicene, a silicon analogue of graphene, has attracted increasing attention during the past
few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of …

Ultra-scaled transistors are of interest in the development of next-generation electronic
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …

Reconfigurable field-effect transistors (FETs) combine unipolar n-and p-type characteristics
in a single programmable device and could be used to reduce the complexity of electronic …

One of the major areas of semiconductor device research is the development of transparent
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …

The well-known empirical phenomenon known as Moore's Law has held true for the past
half century. However, it is beginning to break down, owing to limitations arising from …

Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

Since Moore's law driven scaling of planar MOSFETs faces formidable challenges in the
nanometer regime, FinFETs and Trigate FETs have emerged as their successors. Owing to …