RF Power NLDMOS Technology Transfer Strategy from the 130nm to the 65nm node on thin SOI
O Bon, O Gonnard, L Boissonnet… - 2007 IEEE …, 2007 - ieeexplore.ieee.org
Thin film SOI is a key technology for wireless and RF applications. We demonstrate the
successful transfer of a DriftMOS transistor from the 130 nm technology to the 65 nm one on …
successful transfer of a DriftMOS transistor from the 130 nm technology to the 65 nm one on …
Numerical study of energy capability of Si/SiC LDMOSFETs
A comparable study is made on the energy capability of 190 V LDMOSFETs in Si/SiC, SOI,
PSOI and PSOSiC technology, using capacitive and inductive switching circuits established …
PSOI and PSOSiC technology, using capacitive and inductive switching circuits established …
Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors
YA Chaplygin, EA Artamonova, AY Krasyukov… - Semiconductors, 2008 - Springer
Heat removal problems, thermal effects, and self-heating phenomena occurring during
operation of planar power SOI MOS transistors are considered. Using device-technological …
operation of planar power SOI MOS transistors are considered. Using device-technological …
Thermal resistance reduction in power MOSFETs integrated in a 65nm SOI technology
O Bon, J Roig, F Morancho, S Haendler… - … 2007-37th European …, 2007 - ieeexplore.ieee.org
The static and dynamic analysis of the thermal resistance (R TH) in 65 nm SOI DriftMOS
power devices is presented in this work. Experiment and numerical simulation are both used …
power devices is presented in this work. Experiment and numerical simulation are both used …
High-Voltage and Power Transistors
B El-Kareh, LN Hutter, B El-Kareh, LN Hutter - Silicon Analog Components …, 2020 - Springer
This chapter focuses mainly on the drain-extended MOS (DEMOS) transistor and on the
lateral double-diffused MOS (LDMOS) transistor for high-voltage/high-power applications. In …
lateral double-diffused MOS (LDMOS) transistor for high-voltage/high-power applications. In …
Dependence of the thermal resistance of a powerful MOSFET on a silicon-on-insulator substrate on the construction-technological parameters of its structure
YA Chaplygin, EA Artamonova, AY Krasyukov - Russian Microelectronics, 2012 - Springer
We considered the peculiarities of simulating a powerful MOSFET built on a silicon-on-
insulator substrate. With the aid of instrumental-technological simulation programs, we …
insulator substrate. With the aid of instrumental-technological simulation programs, we …
Зависимость теплового сопротивления мощного МОП-транзистора на подложке кремний-на-изоляторе от конструктивно-технологических параметров его …
ЮА Чаплыгин, ЕА Артамонова… - Известия высших …, 2011 - elibrary.ru
Рассмотрены особенности моделирования мощного МОП-транзистора,
реализованного на подложке кремний-на-изоляторе. С помощью программ приборно …
реализованного на подложке кремний-на-изоляторе. С помощью программ приборно …
Учредители: Национальный исследовательский университет" Московский институт электронной техники
ЮА ЧАПЛЫГИН, ЕА АРТАМОНОВА… - ИЗВЕСТИЯ ВЫСШИХ … - elibrary.ru
Рассмотрены проблемы теплоотвода, тепловые эффекты и явления саморазогрева,
возникающие при работе планарных силовых МОП-транзисторов КНИ-типа. С …
возникающие при работе планарных силовых МОП-транзисторов КНИ-типа. С …