Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research
due to their potential in next-generation electronics. While offering many unique properties …

In the landscape of continuous downscaling metal-oxide-semiconductor field-effect
transistors, two-dimensional (2D) semiconductors with atomic thinness emerge as promising …

The electrical stability and reliability of two-dimensional (2D) crystal-based devices are
mainly determined by charge traps in the device defects. Although nanobubble structures as …

Few-layered molybdenum disulfide (MoS2) has demonstrated promising advantages for the
integration of next-generation electronic devices. A vertical short-channel MoS2 transistor …

Two-dimensional materials (2DMs) have found potential applications in many areas of
electronics, such as sensing, memory systems, optoelectronics, and power. Despite an …

Measurement and optimization of interface states in metal oxide semiconductors are the
premise of building high-performance and high-reliability field-effect transistors (FETs) …

Transition metal dichalcogenides like MoS2 have been considered as crucial channel
materials beyond silicon to continuously advance transistor scaling down owing to their two …

The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces
several challenges, among which is realizing uniform material deposition on the 2D surface …

As the fabrication of short-channel MoS2-FET has made significant progress, there is a
growing need to understand the factors affecting the transfer characteristics for overcoming …