The main intent of this paper is to present an exhaustive description of the most relevant
mathematical models for the electromechanical properties of heterostructure quantum dots …

Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it
both experimentally and numerically. We develop a complete numerical model based on an …

A comparison between k→· p→ and tight-binding methods for the analysis of InAs/GaAs
quantum dot bandstructures is presented based on a fully coupled computation of …

A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs)
exploits InGaN-quantum-dot-based active regions. However, the role of local composition …

We present a study of blue III-nitride light-emitting diodes (LEDs) with multiple quantum well
(MQW) and quantum dot (QD) active regions (ARs), comparing experimental and theoretical …

Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results
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The impact of electromechanical coupling on optical properties of light-emitting diodes
(LEDs) with InGaN/GaN quantum-dot (QD) active regions is studied by numerical …

We present a study with a numerical model based on k→· p→, including electromechanical
fields, to evaluate the electromechanical and optoelectronic properties of single GaAs …

The main intent of this paper is to present an exhaustive description of the most relevant
mathematical models for the electromechanical properties of heterostructure quantum dots …

The finite elements method (FEM) is a useful tool for the analysis of the strain state of
semiconductor heterostructures. It has been used for the prediction of the nucleation sites of …