The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
In this paper, we present a review of experimental results examining charged defect
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
R Suzuki, N Taoka, M Yokoyama, S Lee… - Applied Physics …, 2012 - pubs.aip.org
We have studied the impact of the Al 2 O 3 inter-layer on interface properties of HfO
2/InGaAs metal-oxide-semiconductor (MOS) interfaces. We have found that the insertion of …
2/InGaAs metal-oxide-semiconductor (MOS) interfaces. We have found that the insertion of …
A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0 …
In this work, we present the results of an investigation into the effectiveness of varying
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
ammonium sulphide (NH 4) 2 S concentrations in the passivation of n-type and p-type In …
Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices
J Robertson, Y Guo, L Lin - Journal of Applied Physics, 2015 - pubs.aip.org
The paper describes the reasons for the greater difficulty in the passivation of interface
defects of III–V semiconductors like GaAs. These include the more complex reconstructions …
defects of III–V semiconductors like GaAs. These include the more complex reconstructions …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As
The high-k gate dielectric structures in stacked (HfO2/Al2O3) and nanolaminated (HfAlO x)
forms with a similar apparent accumulation capacitance were atomic-layer-deposited on n …
forms with a similar apparent accumulation capacitance were atomic-layer-deposited on n …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …
An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
In this work, we present the results of an investigation into charge trapping in metal/high-k/In
0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed …
0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed …
Passivation of interfacial defects at III-V oxide interfaces
L Lin, J Robertson - Journal of Vacuum Science & Technology B, 2012 - pubs.aip.org
The electronic structure of gap states has been calculated in order to assign the interface
states observed at III-V oxide interfaces. It is found that As-As dimers and Ga and As …
states observed at III-V oxide interfaces. It is found that As-As dimers and Ga and As …
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
High κ dielectric of HfAlO/HfO 2 was an in-situ atomic-layer-deposited directly on molecular
beam epitaxy grown In 0.53 Ga 0.47 As surface without using pre-treatments or interfacial …
beam epitaxy grown In 0.53 Ga 0.47 As surface without using pre-treatments or interfacial …