We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …

We report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive
switching model for the device is proposed, taking into account important experimental and …

Major challenges concerning the reliability of resistive switching random access memories
based on the valence change mechanism (VCM) are short-term instability and long-term …

HfO x-based synapses are widely accepted as a viable candidate for both in-memory and
neuromorphic computing. Resistance change in oxide-based synapses is caused by the …

Detailed operational and intrinsic switching characteristics for hafnia-based resistive random
access memory (RRAM) are presented, including materials/vacancy engineering …

In this letter, complementary resistive switching (CRS) was demonstrated in a single-stack
graphene oxide (GO) memory cell for the first time, where the high resistance state can be …

To combat the large variability problem in resistive random access memory, current
compliance elements are commonly used to limit the in-rush current during the forming …

Memristor-based neuromorphic systems have been proposed as a promising alternative to
von Neumann computing architectures, which are currently challenged by the ever …

Simulations of the dynamic physical processes involved in HfO 2-based resistive-memory-
operations are used to identify the dielectric structural properties responsible for device …

Conductance variations of resistive random-access memory (RRAM) are significant
challenges that hinder the accurate inference of neural network (NN) hardware. In this study …