Advances and prospects in nitrides based light-emitting-diodes
L Jinmin, L Zhe, L Zhiqiang, Y Jianchang… - Journal of …, 2016 - iopscience.iop.org
Due to their low power consumption, long lifetime and high efficiency, nitrides based white
light-emitting-diodes (LEDs) have long been considered to be a promising technology for …
light-emitting-diodes (LEDs) have long been considered to be a promising technology for …
A review of blue light emitting diodes for future solid state lighting and visible light communication applications
This paper reviews the rapid progress being made in the developments of organic/inorganic
blue light emitting diodes (LEDs). Blue LEDs exhibits outstanding electrical and optical …
blue light emitting diodes (LEDs). Blue LEDs exhibits outstanding electrical and optical …
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
III-nitride photonics
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …
research is a very active field with many important applications in the areas of energy …
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes
The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum
wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was …
wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was …
Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm
Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light-
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
Optical gain characteristics of staggered InGaN quantum wells lasers
Staggered InGaN quantum wells (QWs) are analyzed as improved gain media for laser
diodes (LDs) lasing at 440 and 500 nm. The calculation of band structure is based on a 6 …
diodes (LDs) lasing at 440 and 500 nm. The calculation of band structure is based on a 6 …