A review of switching slew rate control for silicon carbide devices using active gate drivers
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
An overview about Si, Superjunction, SiC and GaN power MOSFET technologies in power electronics applications
This work presents a comparative analysis among four power MOSFET technologies:
conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride …
conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride …
Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge
D Christen, J Biela - IEEE Transactions on Power Electronics, 2018 - ieeexplore.ieee.org
Modern wide-bandgap devices, such as SiC-or GaN-based devices, feature significantly
reduced switching losses, and the question arises if soft-switching operating modes are still …
reduced switching losses, and the question arises if soft-switching operating modes are still …
Evaluation and application of 600 V GaN HEMT in cascode structure
Gallium nitride high electron mobility transistor (GaN HEMT) has matured dramatically over
the last few years. A progressively larger number of GaN devices have been manufactured …
the last few years. A progressively larger number of GaN devices have been manufactured …
Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance
J Wang, HS Chung, RT Li - IEEE Transactions on Power …, 2012 - ieeexplore.ieee.org
This paper presents a comprehensive study on the influences of parasitic elements on the
MOSFET switching performance. A circuit-level analytical model that takes MOSFET …
MOSFET switching performance. A circuit-level analytical model that takes MOSFET …
Predicting SiC MOSFET behavior under hard-switching, soft-switching, and false turn-on conditions
Circuit-level analytical models for hard-switching, soft-switching, and-induced false turn on
of SiC MOSFETs and their experimental validation are described. The models include the …
of SiC MOSFETs and their experimental validation are described. The models include the …
Analytical loss model of high voltage GaN HEMT in cascode configuration
This paper presents an accurate analytical model to calculate the power loss of a high
voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode …
voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode …
Package parasitic inductance extraction and simulation model development for the high-voltage cascode GaN HEMT
This paper presents the development of a simulation model for high-voltage gallium nitride
(GaN) high-electron-mobility transistors (HEMT) in a cascode structure. A method is …
(GaN) high-electron-mobility transistors (HEMT) in a cascode structure. A method is …
Comparison of a buck converter and a series capacitor buck converter for high-frequency, high-conversion-ratio voltage regulators
PS Shenoy, M Amaro, J Morroni… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents an analytical and experimental comparison of a two-phase buck
converter and a two-phase, series capacitor buck converter. The limitations of a …
converter and a two-phase, series capacitor buck converter. The limitations of a …
New physical insights on power MOSFET switching losses
Y Xiong, S Sun, H Jia, P Shea… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum
junction temperature and efficiency of power electronics circuits. The purpose of this paper is …
junction temperature and efficiency of power electronics circuits. The purpose of this paper is …