Arsenic is an essential dopant in conventional silicon-based semiconductors and emerging
phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the …

Chalcogenide glass thin layers are useful to many practical applications especially for the
fabrication of infrared (IR) optical elements. In comparison to the conventional vacuum …

High resolution Raman spectra of GeSe2 glass were measured and fitted using individual
Gaussian components. The structural origin of the components were interpreted using the …

Chalcogenide glasses are intensively studied materials due to their interesting optical
properties such as high values of refractive index, wide transparency in IR, photosensitivity …

Structural order in the chalcogenide glasses of (As 2 S 3) x (GeS 2) 1− x (x= 0.0, 0.1, 0.2, 0.4,
0.6, 0.8, 1.0) system is examined in terms of the parameters of local atomic structure as a …

The Raman scattering of bulk nonstoichiometric chalcogenide alloys along the pseudo-
binary AsS 3–GeS 4 tie-line, which completely lies in the intermediate phase (IP) region of …

For the first time direct one-step relief formation of holographic grating with the use of
amorphous chalcogenide nanomultilayers of new composition based on Ge 5 As 37 S 58 …

Gold nanoparticle assisted thermally initiated chemical vapor deposition was used to
synthesize nanostructured As-S films. The nanostructures were grown on heated Si …

Chalcogenide glass (ChG) thin films prepared by solution based deposition technique offer
important advantages over vacuum deposited films, which are useful for many applications …

Amorphous As 33 S 67 thin films were prepared by spin-coating method from n-butylamine
based glass solution as well as by thermal evaporation. Thin films were doped by silver ions …