Among the emerging memories, resistive switching (RS) based resistive random-access
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …

In this review, an overview of acoustic-and radio-frequency frequency dielectric properties of
multiferroic oxides, the significant dynamic response of electrical polarization to small …

Luminescent materials with reversibly tunable ability under external stimuli, eg, strain and
electric field, are of great interest for developing advanced multifunctional optical devices …

Controlling magnetism by an electric field is of critical importance for the future development
of ultralow-power electronic and spintronic devices. Progress has been made in electrically …

The possibility of modifying the ferromagnetic response of a multiferroic heterostructure via
fully optical means exploiting the photovoltaic/photostrictive properties of the ferroelectric …

Ferroelectric luminescent materials with more unique requirements, such as high-speed, low-
cost, and low-power, and being light-weight, all-inorganic, transparent, flexible and …

One of the most promising contenders for ultralow-energy electronic devices are memristive
memories, which allow for sustainably scalable “neuromorphic” computing, potentially …

The (011) Pb (Mg 1/3 Nb 2/3) 0.7 Ti 0.3 O 3 (PMN-PT)/Ni heterostructure was prepared, and
the influence of light on magnetization reversal behaviors of the Ni layer was investigated …

Using perovskite-type charge-transfer oxide thin films of Nd Ni O 3 (NNO) as a model
system, we demonstrate that the effects of lattice strain on the electronic transport properties …

Abstract By constructing Eu 0.7 Sr 0.3 MnO 3 thin films/0.7 Pb (Mg 1/3 Nb 2/3) O 3-0.3 PbTiO
3 (001) multiferroic heterostructures, the electrical transport properties of the Eu 0.7 Sr 0.3 …