ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
State of the art of metal oxide memristor devices
Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …
integrated electronic devices for advanced computing and digital and analog circuit …
Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer
Conducting bridge random access memory (CBRAM) is one of the most promising
candidates for future nonvolatile memories. It is important to understand the scalability and …
candidates for future nonvolatile memories. It is important to understand the scalability and …
Resistive random access memory enabled by carbon nanotube crossbar electrodes
We use single-walled carbon nanotube (CNT) crossbar electrodes to probe sub-5 nm
memory domains of thin AlO x films. Both metallic and semiconducting CNTs effectively …
memory domains of thin AlO x films. Both metallic and semiconducting CNTs effectively …
Effect of wordline/bitline scaling on the performance, energy consumption, and reliability of cross-point memory array
The impact of wordline/bitline metal wire scaling on the write/read performance, energy
consumption, speed, and reliability of the cross-point memory array is quantitatively studied …
consumption, speed, and reliability of the cross-point memory array is quantitatively studied …
1D selection device using carbon nanotube FETs for high-density cross-point memory arrays
A novel one-transistor-n-resistors (1TnR) array architecture is demonstrated as a cost-
effective solution to the sneak path problem in large-scale cross-point memory arrays. In a …
effective solution to the sneak path problem in large-scale cross-point memory arrays. In a …
Memristor device overview
H Abunahla, B Mohammad, H Abunahla… - … Synthesis and modeling …, 2018 - Springer
Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …
integrated electronic devices for advanced computing and digital and analog circuit …
Low temperature synthesis of high-density carbon nanotubes on insulating substrate
A method to synthesize high-density, vertically-aligned, multi-wall carbon nanotubes
(MWCNTs) on an insulating substrate at low temperature using a complementary metal …
(MWCNTs) on an insulating substrate at low temperature using a complementary metal …
Carbon nanotube network-silicon oxide non-volatile switches
The integration of carbon nanotubes with silicon is important for their incorporation into next-
generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon …
generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon …