This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …

Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …

Conducting bridge random access memory (CBRAM) is one of the most promising
candidates for future nonvolatile memories. It is important to understand the scalability and …

We use single-walled carbon nanotube (CNT) crossbar electrodes to probe sub-5 nm
memory domains of thin AlO x films. Both metallic and semiconducting CNTs effectively …

The impact of wordline/bitline metal wire scaling on the write/read performance, energy
consumption, speed, and reliability of the cross-point memory array is quantitatively studied …

HfOx-based resistive random access memory with an active area down to few nanometers in
diameter is fabricated and characterized. Scaling trends for forming and switching …

A novel one-transistor-n-resistors (1TnR) array architecture is demonstrated as a cost-
effective solution to the sneak path problem in large-scale cross-point memory arrays. In a …

Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …

A method to synthesize high-density, vertically-aligned, multi-wall carbon nanotubes
(MWCNTs) on an insulating substrate at low temperature using a complementary metal …

The integration of carbon nanotubes with silicon is important for their incorporation into next-
generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon …