Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography
In this work, the local atomic level composition of BAlN films with∼ 20% B was investigated
using atom probe tomography. Dislocations and elemental clustering were confirmed along …
using atom probe tomography. Dislocations and elemental clustering were confirmed along …
Detailed band alignment of high-B-composition BGaN with GaN and AlN
F AlQatari, CH Liao… - Journal of Physics D …, 2023 - iopscience.iop.org
The electronic structure of B 0.097 Ga 0.903 N was determined by examining its bandgap
and valence band offset (VBO) in detail. The BGaN sample was grown using a horizontal …
and valence band offset (VBO) in detail. The BGaN sample was grown using a horizontal …
MOCVD Growth and Characterization of BGaN Alloys
FS AlQatari - 2023 - repository.kaust.edu.sa
III-nitride semiconductors have garnered significant attention due to their diverse
applications in the fields of optics and electronics. As GaN-based visible light-emitting …
applications in the fields of optics and electronics. As GaN-based visible light-emitting …