Ultra-bright green InGaN micro-LEDs with brightness over 10M nits
M Zhanghu, BR Hyun, F Jiang, Z Liu - Optics Express, 2022 - opg.optica.org
An investigation of electrical and optical properties of InGaN micro-scale light-emitting
diodes (micro-LEDs) emitting at∼ 530 nm is carried out, with sizes of 80, 150, and 200 µm …
diodes (micro-LEDs) emitting at∼ 530 nm is carried out, with sizes of 80, 150, and 200 µm …
Investigation of InGaN-based green micro-photonic-crystal-light-emitting-diodes with bottom, nanoporous, distributed Bragg reflectors
In this work, an InGaN-based, green micro-photonic crystal-light-emitting-diode (µ-PCLED),
which incorporates a nanoporous, GaN-distributed Bragg reflector (DBR) to form a Fabry …
which incorporates a nanoporous, GaN-distributed Bragg reflector (DBR) to form a Fabry …
Efficiency boosting by thermal harvesting in ingan/Gan light-emitting diodes
On the same micro-LED display panel, LED pixels are always operated with high and low
biased voltages simultaneously to show different brightness and colors. Thus, it is vitally …
biased voltages simultaneously to show different brightness and colors. Thus, it is vitally …
Transparent quantum dot light-emitting diodes with a current focusing structure
We report transparent quantum dot light-emitting diodes with a current focusing structure. By
depositing a SiO 2 thin film to form the current focusing structure, the DC density and …
depositing a SiO 2 thin film to form the current focusing structure, the DC density and …