This paper reviews the experimental evidence behind a new failure mechanism recently
identified in GaN high-electron mobility transistors subject to electrical stress. Under high …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …

This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility …

Trapping is one of the most deleterious effects that limit performance and reliability in GaN
HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN …

This paper presents a fast methodology for the investigation of trapping and hot-electron
effects in GaN-based high-electron mobility transistors (HEMTs). The presented method is …

Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …

A new methodology is developed to determine spatial location and properties of traps
generated by electrical stressing of AlGaN/GaN high-electron mobility transistors, based on …

It has recently been postulated that GaN high electron mobility transistors under high voltage
stress degrade as a result of defect formation induced by excessive mechanical stress that is …

This paper reports on an extensive analysis of the trapping processes and of the reliability of
experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate. The study is based on …