Two-dimensional materials prospects for non-volatile spintronic memories

H Yang, SO Valenzuela, M Chshiev, S Couet, B Dieny… - Nature, 2022 - nature.com
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

The magnetic genome of two-dimensional van der Waals materials

QH Wang, A Bedoya-Pinto, M Blei, AH Dismukes… - ACS …, 2022 - ACS Publications
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as
one of the most promising areas in condensed matter research, with many exciting emerging …

Coherent antiferromagnetic spintronics

J Han, R Cheng, L Liu, H Ohno, S Fukami - Nature Materials, 2023 - nature.com
Antiferromagnets have attracted extensive interest as a material platform in spintronics. So
far, antiferromagnet-enabled spin–orbitronics, spin-transfer electronics and spin caloritronics …

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

H Wang, H Wu, J Zhang, Y Liu, D Chen… - Nature …, 2023 - nature.com
Abstract Two-dimensional (2D) ferromagnetic materials with unique magnetic properties
have great potential for next-generation spintronic devices with high flexibility, easy …

Topological spintronics and magnetoelectronics

QL He, TL Hughes, NP Armitage, Y Tokura, KL Wang - Nature materials, 2022 - nature.com
Topological electronic materials, such as topological insulators, are distinct from trivial
materials in the topology of their electronic band structures that lead to robust …

Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

X Chen, T Higo, K Tanaka, T Nomoto, H Tsai, H Idzuchi… - Nature, 2023 - nature.com
The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly
dependent on the relative orientation of magnetizations in ferromagnetic electrodes …

Roadmap of spin–orbit torques

Q Shao, P Li, L Liu, H Yang, S Fukami… - IEEE transactions on …, 2021 - ieeexplore.ieee.org
Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Layer Hall effect in a 2D topological axion antiferromagnet

A Gao, YF Liu, C Hu, JX Qiu, C Tzschaschel, B Ghosh… - Nature, 2021 - nature.com
Whereas ferromagnets have been known and used for millennia, antiferromagnets were
only discovered in the 1930s. At large scale, because of the absence of global …

Neuromorphic spintronics

J Grollier, D Querlioz, KY Camsari… - Nature …, 2020 - nature.com
Neuromorphic computing uses brain-inspired principles to design circuits that can perform
computational tasks with superior power efficiency to conventional computers. Approaches …

Resistive switching materials for information processing

Z Wang, H Wu, GW Burr, CS Hwang, KL Wang… - Nature Reviews …, 2020 - nature.com
The rapid increase in information in the big-data era calls for changes to information-
processing paradigms, which, in turn, demand new circuit-building blocks to overcome the …