Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects
A large number of factors such as the increasingly stringent pollutant emission policies,
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
fossil fuel scarcity and their price volatility have increased the interest towards the partial or …
The role of power device technology in the electric vehicle powertrain
In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …
Systematic compositional analysis of sputter-deposited boron-containing thin films
Boron-containing materials exhibit a unique combination of ceramic and metallic properties
that are sensitively dependent on their given chemical bonding and elemental compositions …
that are sensitively dependent on their given chemical bonding and elemental compositions …
[HTML][HTML] Assessing boron quantification and depth profiling of different boride materials using ion beams
We assessed the capability to quantify and depth profile boron in different materials by a
number of ion beam-based techniques. Specifically, the depth resolution, probing depth, film …
number of ion beam-based techniques. Specifically, the depth resolution, probing depth, film …
Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates
Z Tang, L Gu, L Jin, K Dai, C Mao, S Wu… - Materials Today …, 2024 - Elsevier
In this work, 4H-SiC homoepitaxial layers were grown on 4° off-axis substrates at different
susceptor rotation speeds by using a hot-wall horizontal CVD reactor. The effect of different …
susceptor rotation speeds by using a hot-wall horizontal CVD reactor. The effect of different …
Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method
F Hoffmann, V Soler, A Mihaila… - 2019 31st International …, 2019 - ieeexplore.ieee.org
In this work the impact of bipolar degradation on the temperature estimation during power
cycling of high voltage SiC MOSFETs by means of the body-diode voltage drop is …
cycling of high voltage SiC MOSFETs by means of the body-diode voltage drop is …
A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
Is SiC a predominant technology for future high power electronics?: a critical review
Due to the magnificent properties of Silicon Carbide (SiC), such as high saturation drift
velocity, large operating temperature, higher cut-off and maximum frequency (fT and fmax) …
velocity, large operating temperature, higher cut-off and maximum frequency (fT and fmax) …
Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors
An alternative gate oxide configuration is proposed to enhance the SiO 2/SiC interface
quality, enabling high mobility 4H-SiC lateral metal-oxide-semiconductor field-effect …
quality, enabling high mobility 4H-SiC lateral metal-oxide-semiconductor field-effect …
Silicon carbide planar junctionless transistor for low-medium voltage power electronics
S Nayak, B SanthiBhushan, S Lodha… - Journal of Physics …, 2021 - iopscience.iop.org
This paper proposes a Silicon Carbide (SiC) based planar junctionless transistor (JLT),
designed and simulated for low to medium power electronic applications, with a calibrated …
designed and simulated for low to medium power electronic applications, with a calibrated …