[PDF][PDF] Ohmic contacts optimisation for high-power InGaAs/AlAs double-barrier resonant tunnelling diodes based on a dual-exposure E-beam lithography approach
In this paper, we report on a simple test structure which can be used to accurately extract the
specific contact resistivity ρc associated with metal-n++ InGaAs-based low-resistance Ohmic …
specific contact resistivity ρc associated with metal-n++ InGaAs-based low-resistance Ohmic …
Accurate quantum transport modelling and epitaxial structure design of high-speed and high-power In0. 53Ga0. 47As/AlAs double-barrier resonant tunnelling diodes …
D Cimbri - 2023 - theses.gla.ac.uk
Terahertz (THz) wave technology is envisioned as an appealing and conceivable solution in
the context of several potential high-impact applications, including sixth generation (6G) and …
the context of several potential high-impact applications, including sixth generation (6G) and …
PL and PLE characterization of high current density resonant tunnelling diodes for THz applications
M Cito, R Baba, O Kojima, BJ Stevens… - … , RF, Millimeter, and …, 2022 - spiedigitallibrary.org
Low-temperature photoluminescence spectroscopy (PL) and excitation spectroscopy (PLE)
are used to characterize and compare high current density resonant tunnelling diodes (RTD) …
are used to characterize and compare high current density resonant tunnelling diodes (RTD) …
Resonant tunnelling diode epitaxial wafer design manufacture and characterisation
M Cito - 2022 - theses.gla.ac.uk
Resonant tunnelling diodes realised using the AlAs/InGaAs lattice match to InP substrates
have demonstrated promising performance as THz sources. The main limitations to …
have demonstrated promising performance as THz sources. The main limitations to …