Design considerations for 4H-SiC lateral BJTs for high temperature logic applications
4H-silicon carbide (SiC)-based bipolar integrated circuits (ICs) are suitable alternatives to
silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H …
silicon (Si)-based ICs in high temperature applications, owing to superior properties of 4H …
Bipolar SRAM memory architecture in 4H-SiC for harsh environment applications
4H-silicon carbide (SiC) is a suitable candidate for high-temperature and radiation prone
applications, due to its superior electrical and material properties. Several researchers have …
applications, due to its superior electrical and material properties. Several researchers have …