GaN-based micro-size light-emitting diode (μLED) have emerged as a promising light
sources for a wide range of applications in displays, visible light communication etc. In …

GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and
distinctive advantages for display, visible-light communication (VLC), and other novel …

Ultrasmall blue InGaN micro-light-emitting diodes (µLEDs) with areas from 10− 4 to 0.01 mm
2 were fabricated to study their optical and electrical properties. The peak external quantum …

We investigated the optical and electrical properties of red AlGaInP light-emitting diodes
(LEDs) as functions of chip size, p-cladding layer thickness, and the number of multi …

In this work, we fabricated and characterized 4× 4 parallel flip-chip AlGaN-based micro-LED
arrays with varied mesa diameters of 120 µm, 100 µm, 80 µm, and 60 µm. The reported …

In this report, the impact of different mesa designs on the optical and electrical
characteristics for GaN-based micro-light emitting diodes (µLEDs) has been systematically …

Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs)
strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as …

Gallium nitride (GaN)‐based light‐emitting diodes (LEDs) have obtained great market
success in the past 20 years. However, the traditional research paradigm, ie, experimental …

A flat-type pp light-emitting diode (LED) utilizing a local breakdown conductive channel
(LBCC) in nitride semiconductor-based LEDs is introduced to replace np LEDs with existing …

This work proposes an effective electrode length model and reveals for the first time the
relationship between this model and the mesa shape effect. On the basis of this model, we …