Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

We report the results of an investigation of low-frequency excess noise in high-current
diamond diodes. It was found that the electronic excess noise of the diamond diodes is …

In this paper, the effect of boron doping on the electrical, morphological and structural
properties of free-standing nanocrystalline diamond sheets (thickness~ 1 μm) was …

Graphene on diamond has emerged as a promising platform for various electronic
applications. This brief review article explores the recent advancements and the potential of …

Diamond is desirable for the application in power device due to its extremely high theoretical
breakdown electric field (> 10 MV/cm). However, because of electric field crowding …

Diamond-based Schottky barrier diodes (SBDs) are involved in many technological
applications. In a conventional SBD fabrication process that involves interface carbide …

This paper reports a high-performance microwave receiver protector (RP) based on a single
gallium nitride (GaN) high electron mobility transistor (HEMT) at an operation frequency of …

The insulator-to-metal phase transition oxides offer an opportunity to overcome the current
constraints in RF limiter technology. In this article, we present shunt power limiters based on …

By introducing a thin p-type layer between the Schottky metal and n-GaN layer, this work
presents a Schottky-pn junction diode (SPND) configuration for the GaN rectifier fabrication …

Favorable material properties such as extreme thermal conductivity, high input power
attenuation, low on resistance and high reliability make diamond among the most promising …