Nanowire electronics: from nanoscale to macroscale

C Jia, Z Lin, Y Huang, X Duan - Chemical reviews, 2019 - ACS Publications
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Vapor phase growth of semiconductor nanowires: key developments and open questions

L Güniat, P Caroff, A Fontcuberta i Morral - Chemical reviews, 2019 - ACS Publications
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

[图书][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

III–V nanowires and nanowire optoelectronic devices

Y Zhang, J Wu, M Aagesen, H Liu - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

III–V nanowire photovoltaics: Review of design for high efficiency

RR LaPierre, ACE Chia, SJ Gibson… - physica status solidi …, 2013 - Wiley Online Library
This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Nanowires for energy: A review

NI Goktas, P Wilson, A Ghukasyan, D Wagner… - Applied Physics …, 2018 - pubs.aip.org
Semiconductor nanowires (NWs) represent a new class of materials and a shift from
conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film …

Crystal phase engineering in single InAs nanowires

KA Dick, C Thelander, L Samuelson, P Caroff - Nano letters, 2010 - ACS Publications
Achieving phase purity and control in III− V nanowires is a necessity for future nanowire-
based device applications. Many works have focused on cleaning specific crystal phases of …

Predictive modeling of self-catalyzed III-V nanowire growth

F Glas, MR Ramdani, G Patriarche, JC Harmand - Physical Review B …, 2013 - APS
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …

Self-catalyzed, pure zincblende GaAs nanowires grown on Si (111) by molecular beam epitaxy

GE Cirlin, VG Dubrovskii, YB Samsonenko… - Physical Review B …, 2010 - APS
We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires
directly on Si (111) substrates. The growth is catalyzed by liquid Ga droplets formed in the …

Crystal phases in III--V nanowires: from random toward engineered polytypism

P Caroff, J Bolinsson… - IEEE journal of selected …, 2010 - ieeexplore.ieee.org
III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to
electronics, energy, and biological sensing. The structural quality of NWs is of paramount …