Inorganic‐based micro light‐emitting diodes (µLEDs) have witnessed significant
improvements in terms of display and biomedical applications, which can shift the paradigm …

The large amount of light emitted from a light emitting diode (LED) being trapped inside the
semiconductor structure is the consequence of the large value of the refractive index. The …

Ultraviolet light-emitting diodes (UV-LEDs) have started replacing UV lamps. The power per
LED of high-power LED products has reached 12 W (14 A), which is 100 times the values …

For III‐nitride‐based devices, such as high‐brightness light‐emitting diodes (LEDs), the poor
heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts …

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the
“green gap” has been a subject of intense scientific and engineering interest. While several …

The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN
templates with the same LED structure. One on thin GaN template (∼ 2 μ m) with high …

To improve the heat dissipation of high-power light-emitting diodes (LEDs), a cooling system
with thermoelectric cooler (TEC) is investigated. In the experiment, the 6× 3W LEDs in two …

Practically all III‐nitride light emitting diodes (LEDs) suffer from the efficiency rollover that
occurs at high electric currents in the devices and limits their performance. At the moment …

By examining two types of lateral InGaN/GaN light emitting diodes with different contact
patterns, we demonstrate that in the intermediate range of current where the space-charge …

We present a comparative study on the optical characteristics of InGaN-based multiple
quantum well light-emitting diodes (LEDs) with peak emission ranging from green to …