The interaction of energetic ions with crystalline semiconductors may cause defect formation
and amorphization both by nuclear and electronic energy deposition which occur …

The present paper gives a survey about the defect generation caused by ion implantation of
GaAs, InAs, GaP, and InP. By combining Rutherford backscattering spectrometry, optical …

The evolution of radiation defects after the thermalization of collision cascades often plays
the dominant role in the formation of stable radiation disorder in crystalline solids of interest …

The accumulation of disorder in Si crystals implanted with 40 keV N+ ions at room
temperature to fluences between 1× 1014 ions cm− 2 and 2× 1015 ions cm− 2 and with ion …

During the past decade numerous studies have dealt with the effects of nitrogen ion
implantation in silicon, such as insulating properties, oxidation inhibition, crystal regrowth …

A composite model for amorphousness production in which simultaneous damage
annealing is allowed during ion irradiation of semiconductors is presented. Numerical …

The electrical activation of ion‐implanted silicon in GaAs has been studied as a function of
dose rate (ie, ion‐current density). For a fluence of 1014 cm− 2, the Hall sheet carrier …

Under definite implantation conditions (small ion masses, sufficiently small ion fluences, and
high implantation temperature) in III–V compounds weakly damaged layers are produced …

Measurements of the lattice disorder and the depth distribution of disorder produced by 40
keV N+ ion irradiation of GaAs have been carried out before and after thermal annealing …

The dependence of the retained lattice damage upon dose rate was investigated by focused
ion beam (FIB) implantation of 210 keV Si++ into GaAs at room temperature. The as …