Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics

PR i Cabarrocas - Current Opinion in Solid State and Materials Science, 2002 - Elsevier
In the past 2 years major advances have been made in the understanding of silane–
hydrogen plasmas. In particular, the control of the formation of clusters and even crystallites …

New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

P Roca i Cabarrocas - physica status solidi (c), 2004 - Wiley Online Library
We review current models and propose new approaches for the production of silicon thin
films by low temperature plasma processes. Growth models have often been borrowed from …

Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

B Kalache, AI Kosarev, R Vanderhaghen… - Journal of Applied …, 2003 - pubs.aip.org
The role of ions on the growth of microcrystalline silicon films produced by the standard
hydrogen dilution of silane in a radio frequency glow discharge is studied through the …

Growth and optoelectronic properties of polymorphous silicon thin films

PR i Cabarrocas, AF i Morral, Y Poissant - Thin Solid Films, 2002 - Elsevier
Polymorphous silicon is a nanostructured thin film consisting of a small fraction of
nanocrystalline silicon particles and/or clusters embedded in a relaxed amorphous matrix …

Role of oxygen impurities in etching of silicon by atomic hydrogen

S Veprek, C Wang… - Journal of Vacuum Science …, 2008 - pubs.aip.org
In a pure-hydrogen glow discharge plasma, the etch rate of silicon increases with increasing
temperature up to about≥ 1100 Å/s at 60–80 C and, upon a further increase of the …

Glow discharge processing in the liquid crystal display industry

J Schmitt, M Elyaakoubi… - Plasma Sources Science …, 2002 - iopscience.iop.org
The active matrix display industry is rapidly presented. The most challenging aspect for
plasma source design lies in the substrate size which is now entering the 1–2 m range. This …

Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices

PR i Cabarrocas, AF i Morral, S Lebib… - Pure and applied …, 2002 - degruyter.com
Powder formation in silane plasmas has been considered as a technology drawback
because it might lead to the formation of macroscopic defects in the deposited layers. Here …

Nanocrystalline silicon thin films prepared by low pressure planar inductively coupled plasma

D Raha, D Das - Applied surface science, 2013 - Elsevier
The present work deals with the optimization of nano-crystalline silicon films at a low
substrate temperature, using planar inductively coupled low pressure plasma CVD. The …

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

I Zardo, S Conesa-Boj, S Estradé, L Yu, F Peiro… - Applied Physics A, 2010 - Springer
Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced
chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the …

The effect of dust on electron heating and dc self-bias in hydrogen diluted silane discharges

E Schüngel, S Mohr, S Iwashita… - Journal of Physics D …, 2013 - iopscience.iop.org
In capacitive hydrogen diluted silane discharges the formation of dust affects plasma
processes used, eg for thin film solar cell manufacturing. Thus, a basic understanding of the …