Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

Gallium oxide has attracted a considerable interest as a functional material for various
applications. This review summarizes the research work carried out in the field of gallium …

Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …

This article is a summary of the latest literature on gas sensing properties of perovskite
materials at room temperature. Among all types of sensors, the perovskite materials with a …

This article provides the latest advances from the NSF Advanced Self-powered Systems of
Integrated sensors and Technologies (ASSIST) center. The work in the center addresses the …

Monoclinic gallium oxide thin films were grown on (0001) sapphire at various substrate
temperatures ranging from 400 to 1000° C by pulsed laser deposition using a KrF excimer …

Fabrication of a high‐temperature deep‐ultraviolet photodetector working in the solar‐blind
spectrum range (190–280 nm) is a challenge due to the degradation in the dark current and …

We designed solar-blind deep-ultraviolet semiconductor photodetectors using individual
Ga2O3 nanobelts. The photoconductive behavior was systematically studied. The …