This work reports on theoretical and experimental investigation of the impact of InAs
quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The …

In this paper, we report on the experimental and theoretical study of BInGaAs/GaAs Single
Quantum Well elaborated by Metal Organic Chemical Vapor Deposition (MOCVD). We …

We investigate the electronic energy levels and carrier dynamics in InAs/In x Ga 1− x As dots-
in-a-well (DWELL) structure by comprehensive spectroscopic characterization over a …

We report on temperature-dependent investigations of single metal-organic vapor phase
epitaxy-grown In (Ga) As/GaAs quantum dots at wavelengths above 1 μm. Here, two types of …

We report the degradation in photoluminescence efficiency of GaAs/(InAs/GaAs) quantum
dot (QD) heterostructures subjected to 20 to 50 keV sulfur implantation. Sulfur ions of fluence …

In this paper, we report on the impact of InAs quantum dots'(QDs) position within InGaAs
strain reducing layer on their structural and optical properties. Morphological investigation …

Optical properties of wurtzite InP/InAs/InP core–shell nanowires grown on silicon substrates
by solid source molecular beam epitaxy are studied by means of photoluminescence and …

In this paper, we report the obtention of quaternary (B) InGaAs/GaAs alloys grown by metal
organic vapour phase epitaxy has been studied using high resolution x ray diffraction …

Type II emission optoelectronic devices using GaAsSb strain reduction layers (SRL) over
InAs quantum dots (QDs) have aroused great interest. Recent studies have demonstrated an …

This paper reports on an initial assessment of the direct growth of In (Ga) As/GaAs quantum
dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy …