Emerging memristive artificial synapses and neurons for energy‐efficient neuromorphic computing

S Choi, J Yang, G Wang - Advanced Materials, 2020 - Wiley Online Library
Memristors have recently attracted significant interest due to their applicability as promising
building blocks of neuromorphic computing and electronic systems. The dynamic …

Solids, liquids, and gases under high pressure

HK Mao, XJ Chen, Y Ding, B Li, L Wang - Reviews of Modern Physics, 2018 - APS
Pressure has long been recognized as a fundamental thermodynamic variable but its
application was previously limited by the available pressure vessels and probes. The …

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Néel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV4S8

I Kézsmárki, S Bordács, P Milde, E Neuber, LM Eng… - Nature materials, 2015 - nature.com
Following the early prediction of the skyrmion lattice (SkL)—a periodic array of spin vortices—
it has been observed recently in various magnetic crystals mostly with chiral structure …

A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator

P Stoliar, J Tranchant, B Corraze… - Advanced Functional …, 2017 - Wiley Online Library
During the last half century, the tremendous development of computers based on von
Neumann architecture has led to the revolution of the information technology. However, von …

Resistive switching in Mott insulators and correlated systems

E Janod, J Tranchant, B Corraze… - Advanced Functional …, 2015 - Wiley Online Library
Resistive random access memories (ReRAM) form an emerging type of non‐volatile
memories, based on an electrically driven resistive switching (RS) of an active material. This …

Multiferroicity and skyrmions carrying electric polarization in GaV4S8

E Ruff, S Widmann, P Lunkenheimer, V Tsurkan… - Science …, 2015 - science.org
Skyrmions are whirl-like topological spin objects with high potential for future magnetic data
storage. A fundamental question that is relevant to both basic research and application is …

Universal electric-field-driven resistive transition in narrow-gap Mott insulators

P Stoliar, L Cario, E Janod, B Corraze… - arXiv preprint arXiv …, 2013 - arxiv.org
One of today's most exciting research frontier and challenge in condensed matter physics is
known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of …

Mott-transition-based RRAM

Y Wang, KM Kang, M Kim, HS Lee, R Waser… - Materials today, 2019 - Elsevier
Resistance random-access memory (RRAM) is a promising candidate for both the next-
generation non-volatile memory and the key element of neural networks. In this article …

A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing

Y Ran, Y Pei, Z Zhou, H Wang, Y Sun, Z Wang, M Hao… - Nano Research, 2023 - Springer
Mott insulator material, as a kind of strongly correlated electronic system with the
characteristic of a drastic change in electrical conductivity, shows excellent application …