Extreme high efficiency enabled by silicon carbide (SiC) power devices

Z Chen, AQ Huang - Materials Science in Semiconductor Processing, 2024 - Elsevier
Efficient renewable electricity generation, conversion, and delivery are vital for addressing
the pressing need to limit global temperature rise to below 2° C by 2050. The electrification …

High power converter busbar in the new era of wide-band-gap power semiconductor

Z Chen, AQ Huang - 2023 IEEE Energy Conversion Congress …, 2023 - ieeexplore.ieee.org
The busbar is crucial in high-power converters to interconnect high-current and high-voltage
subcomponents. This paper reviews the state-of-the-art busbar design and provides design …

[HTML][HTML] Busbar Design for High-Power SiC Converters

Z Chen, AQ Huang - Electronics, 2024 - mdpi.com
Busbars are critical components that connect high-current and high-voltage subcomponents
in high-power converters. This paper reviews the latest busbar design methodologies and …

A high power density 75kva air-cooled sic intelligent power stage (ips) as a universal building block for grid applications

Z Chen, C Chen, HS Rizi… - 2023 IEEE Applied Power …, 2023 - ieeexplore.ieee.org
With more and more power electronics-based resources and loads being integrated into the
grid, there is a strong desire to standardize the grid power electronics building block to …

Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers

NA Mahadik, RE Stahlbush, M Dudley… - Scripta Materialia, 2023 - Elsevier
The formation mechanism and propagation behavior of a complex stacking fault (SF) in thick
silicon carbide epitaxial layers was investigated using depth-resolved section X-ray …

Tackle power outage effects for Egypt's energy crisis via localized optimum load shedding

MAEH Mohamed - Energy Policy, 2024 - Elsevier
This paper presents an approach for selecting optimal load-shedding values for individual
subscribers or consumers. Implementing this method can bring positive outcomes for …

Testing Methodology for Wide Bandgap High Power Converter with Limited Lab Resources

Z Chen, C Chen, AQ Huang - 2023 IEEE Energy Conversion …, 2023 - ieeexplore.ieee.org
Wide bandgap (WBG) power semiconductors devices are being adopted in high-power
electronics applications at an accelerated rate. However, how to power up and test the …

High Power Density Buck Boost DC/DC Converter Using SIC MOSFET

Z Rana, R Meng, K Ali, R Haseeb - Journal of Physics …, 2024 - iopscience.iop.org
High power density is an advance in power electronics. Third generation wide-bandgap
semiconductor devices (WBG SICs) offer significantly improved performance compared to …

[PDF][PDF] A 1200V/400A/2.2 mΩ SiC Power Module with Insulated Metal Substrate (IMS) and Improved Electromagnetic Interference (EMI)

Z Chen, AQ Huang - Proceedings of the 2024 IEEE Energy …, 2024 - researchgate.net
Wide-bandgap (WBG) power semiconductors, known for their superior material properties
compared to traditional silicon (Si) counterparts, have garnered growing interest in power …

Modelling the Effect of the DC Link Decoupling Capacitor of a Commutation Power Loop Using a Thevenin-Based Frequency Domain Approach

A Ajiboye, AS Gamwari, R Resalayyan… - 2024 IEEE Applied …, 2024 - ieeexplore.ieee.org
The high commutation speed of wide band-gap devices causes undesired voltage
overshoots and oscillatory behavior observed across the drain-source port. The mitigation of …